Closed-Loop Sensor

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HS20-A-C Series Current Sensor/Tranducer

DESCRIPTION:
For the electronic measurement of current: DC, AC, pulsed ..., with galvanic separation between the primary and the secondary circuit.

product details

Features

◆ Closed loop using the Hall effect

◆ The primary side and the secondary side are isolated

◆ Low power consumption

◆ Wide range

◆ No insertion loss

◆ Raw materials recognized according to UL 94-V0

Application

◆ Inverter

◆ Uninterruptible Power Supplies (UPS)

◆ Static converters for DC motor drives

◆ Switched Mode Power Supplies (SMPS)

◆ Power supplies for welding applications

◆ Battery management

Model list

Product model
Model	Rated input current I_PN(A)	Measuring range I_P_M(A)
HS20- 25A-C	25	0~ ± 50
HS20- 50A-C	50	0~ ± 100
HS20-100A-C	100	0~ ± 2 00
HS20-200A-C	200	0 ~ ± 400
HS20-300A-C	300	0 ~ ± 600

HS20-25A-C Specification

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ⁽¹⁾	V_C	V	±15
Current consumption	I_C	mA	10+ output current
Output current ISN	I_SN	mA	25
Overcurrent capability (1ms )	I_PC	At	-
Insulation resistance	R_IS	MΩ	> 2000	@500VDC
Internal impedance	R_S	Ω	-	approximation
Load Resistor ⁽²⁾	R_M	Ω	0~500
Performance Data
Linearity ⁽³⁾(0…±I_PN)	ε_L	%of I_PN	<±0.2%	@T_A= 25°C
Precision	X	%	<±0.5%	@ I_PN, T_A= 25°C
Precision	X	%	<±0.5%	( remove zero offset current )
Zero offset current	I_O_E	mA	<±0.2	@ I_P=₀, T_A=25°C
Magnetic offset current	I_O_M	mA	<±0.2	@ I_P=0;
Magnetic offset current	I_O_M	mA	<±0.2	1 times the rated current impact
Zero offset temperature drift	I_O_T	mA	<±0.5	@ I_P₌₀, @ -40 ~ +85 °C
Response time	t_r	µS	<1	@ 90% of I_PNstep response
Current follows d _i/d _t	d_i/d_t	A/µS	>100
Bandwidth ⁽⁴⁾	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	T_A	℃	-40….+85
Storage ambient temperature	T_S	℃	-40….+100
Weight	m	g	60	approximation

HS20-50A-C Specification

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ⁽¹⁾	V_C	V	±15
Current consumption	I_C	mA	10+ output current
Output current ISN	I_SN	mA	50
Overcurrent capability (1ms )	I_PC	At	-
Insulation resistance	R_IS	MΩ	> 2000	@500VDC
Internal impedance	R_S	Ω	-	approximation
Load Resistor ⁽²⁾	R_M	Ω	0~245
Performance Data
Linearity ⁽³⁾(0…± _IPN)	ε_L	%of I_PN	<±0.2%	@T_A= 25°C
Precision	X	%	<±0.5%	@ I_PN, T_A= 25°C
Precision	X	%	<±0.5%	( remove zero offset current )
Zero offset current	I_O_E	mA	<±0.2	@ I_P=₀, T_A=25°C
Magnetic offset current	I_O_M	mA	<±0.2	@ I_P ₌0;
Magnetic offset current	I_O_M	mA	<±0.2	1 times the rated current impact
Zero offset temperature drift	I_O_T	mA	<±0.5	@ I_P₌₀, @ -40 ~ +85 °C
Response time	t_r	µS	<1	@ 90% of I_PNstep response
Current follows d _i/d _t	d_i/d_t	A/µS	>100
Bandwidth ⁽⁴⁾	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	T_A	℃	-40….+85
Storage ambient temperature	T_S	℃	-40….+100
Weight	m	g	60	approximation

HS20-100A-C Specification

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ⁽¹⁾	V_C	V	±15
Current consumption	I_C	mA	10+ output current
Output current ISN	I_SN	mA	50
Overcurrent capability (1m s )	I_PC	At	-
Insulation resistance	R_IS	MΩ	> 2 0 00	@500VDC
Internal impedance	R_S	Ω	-	approximation
Load Resistor ⁽²⁾	R_M	Ω	0~203
Performance Data
Linearity ⁽³⁾(0…± _IPN)	ε_L	%of I_PN	<±0.2%	@T_A= 25°C
Precision	X	%	<±0.5%	@ I_PN, T_A = 25°C
Precision	X	%	<±0.5%	( remove zero offset current )
Zero offset current	I_O_E	mA	<±0.2	@ I_P=₀, TA=25°C
Magnetic offset current	I_O_M	mA	<±0.2	@ I_P ₌0;
Magnetic offset current	I_O_M	mA	<±0.2	1 times the rated current impact
Zero offset temperature drift	I_O_T	mA	<±0.5	@ I_P₌₀, @ -40 ~ +85 °C
Response time	t_r	µS	<1	@ 90% of I_PNstep response
Current follows d _i/d _t	d_i/d_t	A/µS	>100
Bandwidth ⁽⁴⁾	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	T_A	℃	-40….+85
Storage ambient temperature	T_S	℃	-40….+100
Weight	m	g	60	approximation

HS20-200A-C Specification

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ⁽¹⁾	V_C	V	±15
Current consumption	I_C	mA	10+ output current
Output current ISN	I_SN	mA	100
Overcurrent capability (1m s )	I_PC	At	-
Insulation resistance	R_IS	MΩ	> 2 0 00	@500VDC
Internal impedance	R_S	Ω	-	approximation
Load Resistor ⁽²⁾	R_M	Ω	0~75
Performance Data
Linearity ⁽³⁾(0…± _IPN)	ε_L	%of I_PN	<±0.2%	@T_A= 25°C
Precision	X	%	<±0.5%	@ I_PN, T_A = 25°C
Precision	X	%	<±0.5%	( remove zero offset current )
Zero offset current	I_O_E	mA	<±0.2	@ I_P=₀, T_A=25°C
Magnetic offset current	I_O_M	mA	<±0.2	@ I_P ₌0;
Magnetic offset current	I_O_M	mA	<±0.2	1 times the rated current impact
Zero offset temperature drift	I_O_T	mA	<±0.5	@ I_P₌₀, @ -40 ~ +85 °C
Response time	t_r	µS	<1	@ 90% of I_PNstep response
Current follows d _i/d _t	d_i/d_t	A/µS	>100
Bandwidth ⁽⁴⁾	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	T_A	℃	-40….+85
Storage ambient temperature	T_S	℃	-40….+100
Weight	m	g	60	approximation

HS20-300A-C Specification

Parameter	Symbol	Unit	Value	Test Conditions
Electrical Data
Supply voltage (±5%) ⁽¹⁾	V_C	V	±15
Current consumption	I_C	mA	10+ output current
Output current ISN	I_SN	mA	100
Overcurrent capability (1m s )	I_PC	At	-
Insulation resistance	R_IS	MΩ	> 2 0 00	@500VDC
Internal impedance	R_S	Ω	-	approximation
Load Resistor ⁽²⁾	R_M	Ω	0~60
Performance Data
Linearity ⁽³⁾(0…± _IPN)	ε_L	%of I_PN	<±0.2%	@T_A= 25°C
Precision	X	%	<±0.5%	@ I_PN, T_A= 25°C
Precision	X	%	<±0.5%	( remove zero offset current )
Zero offset current	I_O_E	mA	<±0.2	@ I_P=₀, T_A=25°C
Magnetic offset current	I_O_M	mA	<±0.2	@ I_P ₌0;
Magnetic offset current	I_O_M	mA	<±0.2	1 times the rated current impact
Zero offset temperature drift	I_O_T	mA	<±0.5	@ I_P₌₀, @ -40 ~ +85 °C
Response time	t_r	µS	<1	@ 90% of I_PNstep response
Current follows d _i/d _t	d_i/d_t	A/µS	>100
Bandwidth ⁽⁴⁾	BW	kHz	DC~100	@-3dB
General Data
Working ambient temperature	T_A	℃	-40….+85
Storage ambient temperature	T_S	℃	-40….+100
Weight	m	g	60	approximation

Notice

(1) Under the power supply condition of ±12V≤VC≤±15V, the measurement range of the sensor will be reduced;

(2) If the customer uses the rated load resistance, the current to be measured needs to be limited to the rated current. If the full-scale current is to be measured, the load resistance should be smaller than the rated resistance .

(3) Linearity data does not include zero offset.

Insulation data

Parameter	Symbol	Unit	Value	Remark
AC isolation withstand voltage test RMS @ 50Hz, 1min	U_D	KV	3
Impulse withstand voltage 1.2/50uS	U_W	KV	6
Shell material	-	-	UL94-V0	PPO
Relative tracking index	CTI	PLC	275
Creepage distance	d_CP	mm	7
Electrical clearance	d_CI	mm	6

Maximum limit

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	±18
Output current (output shorted to ground)	Iout	mA	-
Electrostatic discharge - contact discharge	VESD	V	-