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HS92-A-C Series Current Sensor/Transducer

Open-Loop Sensor (EV)

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HS92-A-C Series Current Sensor/Transducer

DESTCRIPTION:
                                                                
For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.

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    product details

    Features

    ◆ Open loop using the Hall ASIC effect 
    ◆ Original side and side isolation
    ◆ Low power consumption
    ◆ Wide range
    ◆ No insertion loss
    ◆ Raw materials recognized according to UL 94-V0

    Application

    ◆ Motor controller
    ◆ Uninterruptible Power Supply (UPS)
    ◆ Static converters for DC motor drives
    ◆ Switched Mode Power Supplies (SMPS)
    ◆ Power supplies for welding applications

    Model list

    Product model

    Model

    Rated input current IPN (A)

    Measuring range IPM (A)

    HS92-25A / 200A-C

    25/200

    ± 25/ ± 200

    HS92-50A / 200A-C

    50/200

    ± 50/ ± 200

    HS92-30A / 350A-C

    30/350

    ± 30/ ± 350

    HS92-20A / 500A-C

    20/500

    ± 20/ ± 500

    HS92-75A / 500A-C

    75/500

    ± 75/ ± 500

    HS92-75A / 750A-C

    75/750

    ± 75/ ± 750

    HS92-75A /1000A-C

    75/1000

    ± 75/ ±1000

    HS92-25A/200A-C Channel 1 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    		 Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    25

    -
    Primary current measurement range

    IPM

    A

    -25

    -

    25
    Supply voltage

    VC

    V

    4.75

    5

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    80

    -
    Current consumption

    IC

    mA

    -

    15

    20
    Load resistance

    RL

    kΩ

    10

    -

    -

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5

    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.125

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.07

    -

    		 @TA -40℃~+125℃
    Magnetic offset voltage

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5V after±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    25

    250
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-25A/200A-C Channel 2 Specification

    Parameter

    		 Symbol Unit Min Typ Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    200

    -
    Primary current measurement range

    IPM

    A

    -200

    -

    200
    Supply voltage

    VC

    V

    4.75

    5

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    10

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    -

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±1

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.07

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5V after±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    25

    250
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    T A

    °C

    -40 ~ +125
    Ambient storage temperature

    T S

    °C

    -40 ~ +125
    Mass

    m

    g

    82

    HS92-50A/200A-C Channel 1 Specification

    Parameter

    		 Symbol

    Unit

    Min

    Typ

    		 Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    50

    -

    		  
    Primary current measurement range

    IPM

    A

    -50

    -

    50

    		  
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25

    		  
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @ VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    40

    -

    		  
    Current consumption

    IC

    mA

    -

    15

    20

    		  
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100

    		  
    Power filter capacitor

    C1

    µF

    -

    -

    -

    		  

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5

    		  
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.25

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.04

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5V after±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1

    		  
    Bandwidth ( -3dB)

    BW

    Hz

    -

    278

    		 -  
    Phase shift

    ∆∅

    degree

    -

    -

    -

    		  
    Output noise

    Vno pp

    mV

    -10

    10

    		  

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125

    		  
    Ambient storage temperature

    TS

    ℃

    -40~+125

    		  
    Mass

    m

    g

    82

    HS92-50A/200A-C Channel 2 Specification

    Parameter

    		 Symbol Unit

    Min

    		 Typ Max

    Comment

    Electrical parameters
    Primary side rated current

    IPN

    A

    -

    200

    -
    Primary current measurement range

    IPM

    A

    -200

    -

    200
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    10

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±1

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.07

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5V after±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    Hz

    -

    278

    		 -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-30A/350A- C Channel 1 Specification

    Parameter

    		 Symbol Unit

    Min

    		 Typ Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    30

    -
    Primary current measurement range

    IPM

    A

    -30

    -

    30
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    66.7

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.15

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.06

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5V after±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    kHz

    -

    1.1

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-30A/350A- C Channel 2 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    350

    -
    Primary current measurement range

    IPM

    A

    -350

    -

    350
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    5.71

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±1.75

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.04

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    kHz

    -

    1.1

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-20A/500A-C Channel 1 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    20

    -
    Primary current measurement range

    IPM

    A

    -20

    -

    20
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    100

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.03

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.1

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.09

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    25

    250
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-20A/500A-C Channel 2 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    500

    -
    Primary current measurement range

    IPM

    A

    -500

    -

    500
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    4

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±2.5

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.03

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    25

    250
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-75A/500A-C Channel 1 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    75

    -
    Primary current measurement range

    IPM

    A

    -75

    -

    75
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    theoretical gain

    Gth

    		 mV/A

    -

    26.7

    -
    current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.37

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth (-3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92-75A/500A-C Channel 2 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    500

    -
    Primary current measurement range

    IPM

    A

    -500

    -

    500
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Rheoretical gain

    Gth

    		 mV/A

    -

    4

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±2.5

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.03

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92- 75A/750 A-C Channel 1 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    75

    -
    Primary current measurement range

    IPM

    A

    -75

    -

    75
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    26.7

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    gain error

    ƐG

    %

    -1.5

    -

    1.5
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.37

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    kHz

    -

    1.1

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92- 75A/750 A-C Channel 2 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    Max

    Comment

    Electrical parameters
    Primary side rated current

    IPN

    A

    -

    750

    -
    Primary current measurement range

    IPM

    A

    -750

    -

    750
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    2.67

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±3.75

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    kHz

    -

    1.1

    -
    phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92- 75A/100 0A-C Channel 1 Specification

    Parameter

    Symbol

    Unit

    Min

    Typ

    		 Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    75

    -
    Primary current measurement range

    IPM

    A

    -75

    -

    75
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    Theoretical gain

    Gth

    		 mV/A

    -

    26.7

    -
    Current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.5

    -

    1.5
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±0.37

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.03

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    HS92- 75A/100 0A-C Channel 2 Specification

    Parameter

    		 Symbol

    Unit

    Min

    Typ

    		 Max

    Comment

    Electrical Data
    Primary side rated current

    IPN

    A

    -

    1000

    -
    Primary current measurement range

    IPM

    A

    -1000

    -

    1000
    Supply voltage

    VC

    V

    4.75

    5.0

    5.25
    Output voltage

    VOUT

    V

    VOUT=(VC/5) x (2.5+Gth x IP)

    		 @VC=5V
    Zero output voltage

    VQOV

    V

    2.475

    2.5

    2.525

    		 @VC=5V & IP=0A
    theoretical gain

    Gth

    		 mV/A

    -

    2

    -
    current consumption

    IC

    mA

    -

    15

    20

    		 @VC=5V
    Load resistance

    RL

    kΩ

    10

    -

    unlimited

    		 @VOUT to GND
    Load capacitance

    C2

    nF

    1

    -

    100
    Power filter capacitor

    C1

    µF

    -

    -

    -

    Performance Data
    Gain error

    ƐG

    %

    -1.2

    -

    1.2
    Temperature drift of gain error

    TCG

    %/℃

    -

    ±0.03

    -

    		 @TA -40℃~+125℃
    Zero point error

    IOE

    A

    -

    ±5

    -

    		 @VC=5V &IP=0A
    Temperature drift of zero error

    TCVOE

    mV/℃

    -

    ±0.02

    -

    		 @TA -40℃~+125℃
    Magnetic offset current

    IOM

    A

    -

    ±0.25

    -

    		 @TA=25℃@VC=5Vafter±IP
    Nonlinear error ƐL

    % of IPN

    -0.5

    -

    0.5

    		 exclude zero VOE
    Response time

    tr

    ms

    -

    -

    1
    Bandwidth ( -3dB)

    BW

    Hz

    -

    70

    -
    Phase shift

    ∆∅

    degree

    -

    -

    -
    Output noise

    Vno pp

    mV

    -10

    -

    10

    General Data
    Ambient operating temperature

    TA

    ℃

    -40~+125
    Ambient storage temperature

    TS

    ℃

    -40~+125
    Mass

    m

    g

    82

    Note

    （1）The output voltage Uout , the offset voltage UQOV , and the sensitivity Gth are completely proportional to the power supply Vc;

    （2）The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise it will cause the core and chip to overheat;

    （3）Incorrect wiring may damage the sensor.

    Insulation data

    Parameter

    Symbol

    Unit

    Value

    Comment
    AC isolation withstand voltage test RMS @ 50Hz, 1min

    UD

    KV

    2

    Impulse withstand voltage 1.2/50uS

    UW

    KV

    -

    Shell material

    -

    -

    UL94-V0

    PBT 30 GF
    Relative tracking index

    CTI

    V

    425

    Creepage distance

    dCP

    mm

    　3.1

    Electrical clearance

    dCI

    mm

    　3.1

    Maximum limit

    Parameter

    Symbol

    Unit

    Value
    Supply voltage

    VC

    V

    14
    Continuous output current

    Iout

    mA

    10
    Electrostatic discharge - contact discharge

    VESD

    KV

    2

    Mechanical Dimensions

    product-description1

    Safety

    • This device must be used according to  IEC61010-1.
    • product description07
    This device must be used in electric/electronic equipment with respect to applicable standards and safety requirements in accordance with the operating instructions.
    • Caution, risk of electrical shock.
    • product description08
    When operating the device, certain parts can carry hazardous voltage (eg. primary busbar, power supply). Ignoring this warning can lead to injury and/or cause serious damage.
    This is a built-in device, whose conducting parts must be inaccessible after installation.
    A protective housing or additional shield can be used.
    Main supply must be able to be disconnected.

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